Jump to content

Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions

← Older editNewer edit →
VisualWikitext
Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,146 edits
Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,146 edits
Line 29: Line 29:
'''  
'''  


To study the uniformity across af wafer that has been boron doped using a pre-deposition process and a short wet oxidation to oxidixe the boron phase layer in the Boron Predep and Drive-in furnace (A1) at DTU Danchip.  
To study the uniformity across a wafer that has been boron doped using a pre-deposition process and a short wet oxidation to oxidixe the boron phase layer in the Boron Predep and Drive-in furnace (A1) at DTU Danchip.  


'''
'''
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/Dope_with_Boron"