Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
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====Experimental setup==== | ====Experimental setup==== | ||
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3 phosphorous doped device wafers (n-type) were used. In the furnace 3 RCA-cleaned wafers were placed in the center of the boat with Boron source wafers (also RCA cleaned) with the front side facing the source wafers.A pre-deposition process was made for | 3 phosphorous doped device wafers (n-type) were used. In the furnace 3 RCA-cleaned wafers were placed in the center of the boat with Boron source wafers (also RCA cleaned) with the front side facing the source wafers.A pre-deposition process was made for one hour at 1125 °C, then the source wafers were removed and the device wafers oxidized in a wet oxidation process at 950 °C for half a hour. Finally the oxide was removed in BHF and one wafer was cut into small samples for SIMS measurements. | ||
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The SIMS measurement shows a good uniformity | The SIMS measurement shows a good uniformity | ||
[[image: | [[image:60min_Predep_WET950.jpg|500x600px|left|thumb|SIMS Measurement at 5 different positions after Pre-deposition of boron]] | ||
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