Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
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*Primarily for pure physical etch by sputtering with Ar-ions | *Primarily for pure physical etch by sputtering with Ar-ions | ||
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*Anisotropic etch: vertical sidewalls | |||
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*Any material that is accepted in the machine | *Any material that is accepted in the machine | ||
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*Resists | |||
*other materials form the allowed list of materials | |||
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*Process dependent. | *Process dependent. | ||
*Has not been tested yet. | *Has not been tested yet. | ||
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*Process dependent | |||
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*<nowiki>#</nowiki>1 150 mm wafers with special carrier | *<nowiki>#</nowiki>1 150 mm wafers with special carrier | ||
*<nowiki>#</nowiki>1 200 mm wafer | *<nowiki>#</nowiki>1 200 mm wafer | ||
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*Set up for 150mm wafers | |||
*Smaller samples can be processes when fixed to a 150mm carrier wafer. | |||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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*Polymers | *Polymers | ||
*Capton tape | *Capton tape | ||
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*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*E-beam resists | |||
*DUV resists | |||
*Aluminium (Al, Al2O3, AlN) | |||
*Chromium | |||
*Titanium (Ti, TiW, TiN, TiO2) | |||
*Tungsten (W) | |||
*Molybdynem | |||
*Quartz/fused silica | |||
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