Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
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![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | ![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | ||
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | ||
![[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal]] | |||
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Revision as of 13:56, 8 January 2016
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Comparing silicon nitride etch methods at Danchip
There are a broad varity of silicon nitride etch methods at Danchip. The methodes are compared here to make it easier for you to compare and choose the one that suits your needs.
- Wet Silicon Nitride Etch
- Etch of Silicon Nitride using RIE
- Etch of Silicon Nitride using AOE
- IBE/Ion Beam Etching using IBSD Ionfab 300
Compare the methods for Silicon Nitride etching
Wet Silicon Nitride Etch | BHF | RIE (Reactive Ion Etch) | AOE (Advanced Oxide Etch) | IBE/IBSD Ionfab 300 | ICP Metal
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Generel description |
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Possible masking materials |
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Etch rate range |
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Substrate size |
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Allowed materials |
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