Specific Process Knowledge/Etch/ICP Metal Etcher/Titanium: Difference between revisions
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Revision as of 10:31, 11 December 2015
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Titanium etch
| Parameter | Process 1 | Process 2 |
|---|---|---|
| Cl2 (sccm) | 30 | 30 |
| HBr (sccm) | - | - |
| Pressure (mTorr) | 3, Strike 3 secs @ 15 mTorr??? | 3 |
| Coil power (W) | 800 | 900 |
| Platen power (W) | 100 | 50 |
| Temperature (oC) | 20 | 20 |
| Spacers (mm) | 30 | 30 |
| Etch rate (nm/min) | 152 | 64 |
| AZ resist selectivity | 0.67 | 0.83 |
| Etch rate in TiO2 (nm/min) |