Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
| Line 41: | Line 41: | ||
The samples for SIMS measurements corresponds to 5 different positions on the wafer. | The samples for SIMS measurements corresponds to 5 different positions on the wafer. | ||
[[image:Waferlayout.jpg | [[image:Waferlayout.jpg|left|thumb|Sample position on the wafer]] | ||
<br clear="all" /> | |||
The SIMS measurement shows a good uniformity | The SIMS measurement shows a good uniformity | ||