Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
| Line 39: | Line 39: | ||
====Result==== | ====Result==== | ||
''' | ''' | ||
The SIMS measurement shows a good uniformity | |||
[[image:Boron_doping_profiles-w1.jpg|500x600px|left|thumb|SIMS Measurement at 4 different positions after Pre-deposition of boron]][[image:Waferlayout.jpg|400x400px|right|thumb|Sample position on the wafer]] | [[image:Boron_doping_profiles-w1.jpg|500x600px|left|thumb|SIMS Measurement at 4 different positions after Pre-deposition of boron]][[image:Waferlayout.jpg|400x400px|right|thumb|Sample position on the wafer]] | ||
<br clear="all" /> | <br clear="all" /> | ||