Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions

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 The depth profile depends of the process time.
-All this figures have been made at the time where there was a furnace only for Boron Pre-dep (furnace A2). The process was done with the temperature at 1125 <sup>o</sup>C and a flow of 5 slm N<sub>2</sub> and 0.2 slm of O<sub>2</sub>.
+All this figures have been made at the time where there was a furnace only for Boron Pre-dep (furnace A2). The process was done at a temperature of 1125 <sup>o</sup>C and a flow of 5 slm N<sub>2</sub> and 0.2 slm of O<sub>2</sub>.
 <gallery caption="Boron profiles from SIMS " widths="400px" heights="300px" perrow="3">
 image:borprofil_1tim.jpg|Pre-depostion for 1 hour at 1125 °C
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 image:borDiffusionDepthtable.jpg
 image:B_Diff_depth_vs_time_.jpg
+</gallery>
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 '''
-dfsdfds
+====Purpose====
+'''
+To study the uniformity across af wafer that has been boron doped using a pre-deposition process and a short wet oxidation to oxidixe the boron phase layer in the Boron Predep and Drive-in furnace (A1) at DTU Danchip.
+'''
+====Experimental setup====
+'''
+phosphorous doped device wafers (n-type) were used. In the furnace 3 RCA-cleaned wafers were placed in the center of the boat with Boron source wafers (also RCA cleaned) with the front side facing the source wafers.A pre-deposition process was made for ½ hour at 1125 °C, then the source wafers were removed and the device wafers oxidized in a wet oxidation process at 950 °C for ½ hour. Finally the oxide was removed in BHF and one wafer was cut into small samples for SIMS measurements.
+'''
+====Result====
+'''
 [[image:Boron_doping_profiles-w1.jpg|500x600px|left|thumb|SIMS Measurement at 4 different positions after Pre-deposition of boron]]
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