Specific Process Knowledge/Wafer cleaning/cleaning with HF: Difference between revisions

Revision as of 14:16, 27 February 2008 view source BGE (talk \| contribs) Bureaucrats, danchip, Administrators 2,908 edits No edit summary ← Older edit		Revision as of 14:22, 27 February 2008 view source BGE (talk \| contribs) Bureaucrats, danchip, Administrators 2,908 edits No edit summary Newer edit →
Line 1:		Line 1:
	Is in use during the RCA procedure. This bath must only be used in the RCA procedure or to remove native oxide on new wafers from the box. See the [[Specific Process Knowledge/Wafer cleaning/RCA\|RCA]] page for further details.		Is in use during the RCA procedure. This bath must only be used in the RCA procedure or to remove native oxide on new wafers from the box. See the [[Specific Process Knowledge/Wafer cleaning/RCA\|RCA]] page for further details or the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|oxide etch]] page.