Specific Process Knowledge/Thin film deposition/PECVD/Doping: Difference between revisions
| Line 67: | Line 67: | ||
3 tests were made where only the B<sub>2</sub>H<sub>6</sub> flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in approximately 400nm Oxide. | 3 tests were made where only the B<sub>2</sub>H<sub>6</sub> flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in approximately 400nm Oxide. | ||
The wafers were going through several annealing and oxidation step: | The wafers were going through several annealing and oxidation step: | ||