Specific Process Knowledge/Thin film deposition/PECVD/Doping: Difference between revisions
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[[image:PECVD_Boron_doping_profiles.jpg|627x424px|left|thumb|Boron concentration measured by SIMS. Results from Trine Holm Christensen, Space, Feb. 2015.]] | [[image:PECVD_Boron_doping_profiles.jpg|627x424px|left|thumb|Boron concentration measured by SIMS. Results from Trine Holm Christensen, Space, Feb. 2015.]] | ||
Measured peak concentrations and sheet resistances: | |||
{| border="1" cellspacing="0" cellpadding="7" with="50" style="text-align:center;" | |||
|- | |||
|Wafer | |||
|Peak Concentration | |||
[atoms/cm<sup>3</sup>] | |||
|Sheet Resistance | |||
[Ω/sq] | |||
|- | |||
|BSG120 | |||
|1.75*10<sup>19</sup> | |||
|56.4 | |||
|- | |||
|BSG130 | |||
|2.44*10<sup>19</sup> | |||
|36.2 | |||
|- | |||
|BSG140 | |||
|2.36*10<sup>19</sup> | |||
|40.3 | |||
|- | |||
|} | |||
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