Specific Process Knowledge/Thin film deposition/PECVD/Doping: Difference between revisions
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==Boron-doping by use of BSG glass deposited in | ==Boron-doping by use of BSG glass deposited in PECVD2== | ||
===Recipe=== | ===Recipe=== | ||
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== == | ==Boron-doping by use of BSG glass deposited in PECVD2== | ||
''Results from Tine Holm Christensen, DTU-Space, Feb. 2015'' | |||
===Recipe=== | |||
{| border="1" cellspacing="0" cellpadding="7" width="800" style="text-align:center;" | |||
|- | |||
|Recipe name | |||
|SiH<sub>4</sub> flow [sccm] | |||
|N<sub>2</sub>O flow [sccm] | |||
|N2 flow [sccm] | |||
|B<sub>2</sub>H<sub>6</sub> flow [sccm] | |||
|PH<sub>3</sub> flow [sccm] | |||
|Pressure [mTorr] | |||
|Power [W] | |||
|Description | |||
|- | |||
|1PBSG | |||
|17 | |||
|1600 | |||
|0 | |||
|120, 130, 140 | |||
|0 | |||
|400 | |||
|380 | |||
|BSG glass for driving in boron in Silicon | |||
|} | |||
3 tests were made where only the B<sub>2</sub>H<sub>6</sub> flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min, resulting in 440 nm Oxide. | |||
The wafers were going through several annealing and oxidation step: | |||
'''The total thermal budget for the wafers:''' | |||
'''Anneal in Furnace (C1):''' ANN1000, 30 min in N<sub>2</sub>, strip of oxide in a 25 min BHF etch. | |||
'''Wet oxidation in Furnace (C1):''' WET1050, 30 min, no further anneal | |||
'''Anneal in Furnace (C1):''' ANN950, 60 min in N<sub>2</sub> | |||
The wafers were then analyzed by SIMS and the results are shown in the figure below: | |||