Specific Process Knowledge/Thin film deposition/PECVD/Doping: Difference between revisions
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|- | |- | ||
|Recipe name | |Recipe name | ||
| | |SiH<sub>4</sub> flow [sccm] | ||
|N<sub>2</sub>O flow [sccm] | |N<sub>2</sub>O flow [sccm] | ||
|N2 flow [sccm] | |N2 flow [sccm] | ||
| | |B<sub>2</sub>H<sub>6</sub> flow [sccm] | ||
| | |PH<sub>3</sub> flow [sccm] | ||
|Pressure [mTorr] | |Pressure [mTorr] | ||
|Power [W] | |Power [W] | ||
| Line 32: | Line 32: | ||
|} | |} | ||
5 tests were made where only the | 5 tests were made where only the B<sub>2</sub>H<sub>6</sub> flow was changed for each deposition (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min (resulting in 440 nm Oxide). | ||
The wafers were annealed in Anneal Oxide Furnace (C1) at 1000°C for 85 min to drive in the boron and the oxide was subsequently etched in BHF. The wafers were then | The wafers were annealed in Anneal Oxide Furnace (C1) at 1000°C for 85 min to drive in the boron and the oxide was subsequently etched in BHF. The wafers were then analyzed by SIMS and the results are shown in the figure below: | ||