Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si: Difference between revisions

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	'''Test wafer position:''' Center of the boat		'''Test wafer position:''' Center of the boat

	A better uniformity was achieved by annealing in N<sub>2</sub>. Measured film thickness was approximately 370 nm and the sheet resistance was measured to 200 &Omega/sq +/- 15 &Omega/sq.		A better uniformity was achieved by annealing in N<sub>2</sub>. Measured film thickness was approximately 370 nm and the sheet resistance was measured to 200 Ω/sq +/- 15 Ω/sq.