Specific Process Knowledge/Doping: Difference between revisions
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*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorous]] - Doping Silicon wafers with phosphorous by thermal predeposition and drive-in | *[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorous]] - Doping Silicon wafers with phosphorous by thermal predeposition and drive-in | ||
*[[Specific Process Knowledge/Thermal Process/Dope with Boron|Dope with Boron]] - Doping Silicon wafers with boron by thermal predeposition and drive-in | *[[Specific Process Knowledge/Thermal Process/Dope with Boron|Dope with Boron]] - Doping Silicon wafers with boron by thermal predeposition and drive-in | ||
*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si |Furnace LPCVD PolySilicon]] - Deposition of PolySi doped with | *[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si |Furnace LPCVD PolySilicon]] - Deposition of PolySi doped with boron or phosphorous | ||
*[[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] - Making boron glass (BSG), | *[[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] - Making boron glass (BSG), phosphorous glass (PSG), boron-phosphorous glass PBSG or germanium doped glass | ||
*Ion implantation | *Ion implantation | ||