Specific Process Knowledge/Doping: Difference between revisions
| Line 6: | Line 6: | ||
== Doping your wafer == | == Doping your wafer == | ||
This page is about doping your wafer or making a thin film layer doped with boron, phosphorous or Germanium. | This page is about doping your wafer or making a thin film layer doped with boron, phosphorous or Germanium. The links below direct you to various doping results achieved by the use of different processes and heat treatments. | ||
*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorous]] - Doping Silicon wafers with phosphorous by thermal predeposition and drive-in | *[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorous]] - Doping Silicon wafers with phosphorous by thermal predeposition and drive-in | ||
| Line 13: | Line 13: | ||
*[[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorous glass PBSG or germanium doped glass | *[[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorous glass PBSG or germanium doped glass | ||
*Ion implantation | *Ion implantation | ||
<br clear="all" /> | <br clear="all" /> | ||