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==RCA cleaning==
The RCA clean is used for cleaning the wafers before taking them into the furnaces and a few other equipments (check the cross contamination sheet).
The RCA clean is used for cleaning the wafers before taking them into the furnaces and a few other equipments (check the cross contamination sheet).
It consist of two solutions: RCA1 and RCA2
It consist of two solutions: RCA1 and RCA2 plus diluted HF.
 
The RCA1 contains: H<math>_2</math>O, NH<math>_4</math>OH and H<math>_2</math>O<math>_2</math> (5:1:1). It is used for removed of light organics, particles and metal. <br \>
The RCA2 contains: H<math>_2</math>0, HCl and H<math>_2</math>O<math>_2</math> (5:1:1). It is used for removal of heavy metals, alkalies and metal hydroxides.
 
===RCA procedure===
*RCA1: 10 min
*DI wafer rinsing (dumping three times)
*HF: 30 sec (avoid it if you have oxide as the top layer)
*DI wafer rinsing (dumping three times)
*RCA2: 10 min
*DI wafer rinsing (dumping three times)
*HF: 30 sec (avoid it if you have oxide as the top layer)
*DI wafer rinsing (dumping three times)
 
 
===Overview of RCA process data===


The RCA1 contains H<math>_2</math>O, NH<math>_4</math>OH and H<math>_2</math>O<math>_2</math> (5:1:1). It is used for removed of light organics, particles and metal.
{| border="2" cellspacing="0" cellpadding="4" align="left" width="570pt"
!
! 7-up
! Piranha
|-
|'''General description'''
|
Cleaning of wafers or masks using the dedicated tanks. There are one tank for masks and glass wafers and one for 4-6" Si wafers in cleanroom 4 and one tank in cleanroom 3 for 4" Si wafers only.
|
Cleaning of wafers using a beaker in the fumehood in cleanroom 2. Used for glass wafers or wafers with metal or other materials that you are not allowed to put in the 7-up for wafers.
|-
|'''Chemical solution'''
|98% Sulfuric acid and Ammonium sulfate
|98% Sulfuric acid and Hydrogen peroxide 4:1 add H<math>_2</math>O<math>_2</math> to H<math>_2</math>SO<math>_4</math>
|-
|'''Process temperature'''
|80 <sup>o</sup>C


The RCA2 contains H<math>_2</math>0, HCl and H<math>_2</math>O<math>_2</math> (5:1:1). It is used for removal of heavy metals, alkalies and metal hydroxides.
|~70 <sup>o</sup>C the chemicals will heat up to working temperature during mixing, '''therefore be careful!'''
|-
|'''Process time'''
|
10 min.
|
10 min.
|-
|'''Allowed materials'''
|
Dependent on which bath is used, look at the text in the pictures.
|
All materials (in beaker).
|-
|'''Batch size'''
|
1-19/25  4" wafers or 4 masks at a time
|
1-5 4" wafer at a time
|-
|'''Size of substrate'''
|
4-6" wafers
|
2-4" wafers
|-
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Wafer_cleaning/RCA"