*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD|Recipes for deposition of silicon oxides]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD|Recipes for deposition of silicon oxides]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD#Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride|Recipes on for deposition of silicon nitride and silicon oxynitride]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD#Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride|Recipes on for deposition of silicon nitride and silicon oxynitride]]
We have two PECVD's here at DANCHIP. They can all be used to deposit Silicon oxides and Silicon nitrides with or without dopants of Boron, Phosphorus and Germanium. PECVD3 is used for silicon based processing with small amounts (<5% wafer coverage) of metals where as PECVD2 is dedicated for clean wafers both for silicon based materials and III-V materials. Quartz carriers are used in PECVD2 and they are dedicated the two different material groups to avoid cross contamination. See the precise rules in the equipment manuals which are uploaded in LabManager.
PECVD is a chemical vapor deposition process that applies a plasma to enhance chemical reaction rates of reactive spices. PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors.
All though PECVD2 and 3 are very similar you should not expect to transfer a recipe between the systems and get the exact same result.
The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:
Overview of the performance of PECVD thin films and some process related parameters
PECVD
PECVD2
PECVD3
Purpose
Deposition of dielectrica
Silicon oxide
Silicon nitride
Silicon oxynitride
PBSG (Phosphorous Boron doped Silica Glass)
Silicon oxide doped with Germanium
Silicon oxide
Silicon nitride
Silicon oxynitride
PBSG (Phosphorous Boron doped Silica Glass)
Silicon oxide doped with Germanium
Performance
Film thickness
~10nm - 30µm
~10nm - 30µm
Index of refraction
~1.4-2.1
~1.4-2.1
Step coverage
In general: Not so good
PBSG: Floats at 1000oC
In general: Not so good
PBSG: Floats at 1000oC
Film quality
Not so dense film
Hydrogen will be incorporated in the films
Not so dense film
Hydrogen will be incorporated in the films
Process parameter range
Process Temperature
300 oC
300 oC
Process pressure
~200-900 mTorr
~200-900 mTorr
Gas flows
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:0-50 sccm
NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2}
O:0-4260 sccm
NHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3}
:0-740 sccm
NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2}
:0-3000 sccm
GeHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4}
:0-6.00 sccm
5%PHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3}
:0-100 sccm
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HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _6}
:0-1000 sccm
SiHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4}
:0-60 sccm
NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2}
O:0-3000 sccm
NHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3}
:0-1000 sccm
NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2}
:0-3000 sccm
GeHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4}
:0-6.00 sccm
5%PHFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3}
:0-99 sccm
5%BFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2}
HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _6}
:0-1000 sccm
Substrates
Batch size
One 4" wafer per run
One 6" wafer per run
Or several smaler pieces on carrier wafer
Deposition on one side of the substrate
1-3 4" wafer per run
1 6" wafer per run
Or several smaler pieces
Deposition on one side of the substrate
Materials allowed
Silicon wafers, Quartz (fused silica) wafers,
with layers of silicon oxide or silicon (oxy)nitride
III-V wafers (on special carriers)
Silicon wafers, Quarts (fused silica) wafers
with layers of silicon oxide or silicon (oxy)nitride
Other material (can be allowed if less than 3.9 cm2 is exposed to the plasma (<5% coverage of a 4" wafer), please ask!