Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions
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|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | ||
*Dry SiO<sub>2</sub>: 50Å to ~2000Å (takes too long to make it thicker) | *Dry SiO<sub>2</sub>: 50Å to ~2000Å (takes too long to make it thicker) | ||
*Wet SiO<sub>2</sub>: 50Å to ~ | *Wet SiO<sub>2</sub>: 50Å to ~3µm ((takes too long to make it thicker) | ||
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!style="background:silver; color:black" align="left"|Process parameter range | !style="background:silver; color:black" align="left"|Process parameter range |
Revision as of 11:49, 27 February 2008
A1 Furnace Boron drive-in
A1 Furnace boron drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a pre-deposition, oxidation of the boron phase layer. Boron pre-deposition takes place in the A2 Furnace boron pre-dep. It can also be used for drive in of boron which has been ion implanted.
A1 is the top furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with furnace C1 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.
Process knowledge
- Boron drive-in: look at the Dope with Boron page
- Oxidation: look at the Oxidation page
- Annealing: look at the Annealing page
Purpose | Drive-in of boron, oxidation of silicon and boron phase layer and annealing of the oxide | Oxidation:
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Performance | Film thickness |
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Process parameter range | Process Temperature |
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. | Process pressure |
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. | Gas flows |
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Substrates | Batch size |
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. | Substrate material allowed |
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