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*[[/SEM comparison tablel|SEM comparison table]]
*[[/SEM comparison tablel|SEM comparison table]]




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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>ALD Picosun R200</b>
|style="background:WhiteSmoke; color:black"|<b>SEM LEO (Leo 1550 SEM)</b>
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|-
!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"|ALD (atomic layer deposition) of
|style="background:LightGrey; color:black"|Imaging and measurement of
|style="background:WhiteSmoke; color:black"|
*Any (semi)conducting sample that may have thin (> ~ 5 µm) layers of non-conducting materials on top
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!style="background:silver; color:black;" align="center" width="60"|Location
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Cleanroom of DTU Danchip
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!style="background:silver; color:black;" align="center" width="60"|Performance
|style="background:LightGrey; color:black"|Resolution
|style="background:WhiteSmoke; color:black"|
*~ 5 nanometers (limited by vibrations)
The resolution is strongly dependent on the type of sample and the skills of the operator.
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!style="background:silver; color:black" align="center" valign="center" rowspan="5"|Instrument specifics
|style="background:LightGrey; color:black"|Detectors
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>
*Secondary electron (Se2)
*TiO<sub>2</sub>
*Inlens secondary electron (Inlens)
*Pt (not tested yet)
*Backscatter electron (BSD)
Please note that it might not be possible to deposit all marials at the same time
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Stage
|style="background:LightGrey; color:black"|Deposition rates
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>: ~ 0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, depending of the temperature)
*X, Y: 125 × 100 mm
*TiO<sub>2</sub>: Not measured
*T: 0 to 90o
*Pt: Not measured
*R: 360o
*Z: 48 mm
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|-
|style="background:LightGrey; color:black"|Thickness
|style="background:LightGrey; color:black"|Electron source
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>: 0 - 100 nm
*FEG (Field Emission Gun) source
*TiO<sub>2</sub>: 0 - 100 nm
*Pt: ?
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Operating pressures
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>: 150 - 350 <sup>o</sup>C
*Fixed at High vacuum (2 × 10-5mbar - 10-6mbar)
*TiO<sub>2</sub>: ?
*Pt: ?
|-
|-
|style="background:LightGrey; color:black"|Precursors
|style="background:LightGrey; color:black"|Options
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*TMA
*Raith Elphy Quantum E-Beam Litography system
*TiCl<sub>4</sub>
*H<sub>2</sub>O
*O<sub>3</sub>
*O<sub>2</sub>
*MeCpPtMe<sub>3</sub> (not mounted yet)
Please note that not all precursors might be mounted on the tool at the same time
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-5 100 mm wafers
*1 100 mm wafer
*1-5 150 mm wafers
*1 150 mm wafer (not full view)
*Several smaller samples  
*Smaller samples  
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon
*Any standard cleanroom materials.
*Silicon oxide, silicon nitride
Use dedicated samples holders for samples from Black Magic PECVD
*Quartz/fused silica
*Al, Al<sub>2</sub>O<sub>3</sub>
*Ti, TiO<sub>2</sub>
*Other metals (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
|-  
|-  
|}
|}
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