Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions
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| Line 170: | Line 170: | ||
|0.6% | |0.6% | ||
|26/3 2015 | |26/3 2015 | ||
|taran | |||
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|Silicon with native oxide | |||
|1.509 | |||
|0.3% | |||
|4/11 2015 | |||
|taran | |taran | ||
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | |4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | ||
| Line 198: | Line 206: | ||
|1.5% | |1.5% | ||
|26/3 2015 | |26/3 2015 | ||
|taran | |||
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|Silicon with native oxide | |||
|2.000 µm | |||
|0.5% | |||
|4/11 2015 | |||
|taran | |taran | ||
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | |4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | ||
| Line 226: | Line 242: | ||
|0.7% | |0.7% | ||
|26/3 2015 | |26/3 2015 | ||
|taran | |||
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|Silicon with native oxide | |||
|4.059 µm | |||
|0.7% | |||
|4/11 2015 | |||
|taran | |taran | ||
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | |4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | ||