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Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions

Taran (talk | contribs)
Taran (talk | contribs)
Line 170: Line 170:
|0.6%
|0.6%
|26/3 2015
|26/3 2015
|taran
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
|-
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|1.509
|0.3%
|4/11 2015
|taran
|taran
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
Line 198: Line 206:
|1.5%
|1.5%
|26/3 2015
|26/3 2015
|taran
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
|-
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|2.000 µm
|0.5%
|4/11 2015
|taran
|taran
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
Line 226: Line 242:
|0.7%
|0.7%
|26/3 2015
|26/3 2015
|taran
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
|-
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|4.059 µm
|0.7%
|4/11 2015
|taran
|taran
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm