Specific Process Knowledge/Lithography/Baking: Difference between revisions

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 ![[Specific_Process_Knowledge/Lithography/Baking#Hotplate:_90-110C|Hotplate: 90-110C]]
 ![[Specific_Process_Knowledge/Lithography/Baking#Hotplate 1 (SU8) and Hotplate 2 (SU8)|Hotplate 1 (SU8) and 2]]
-![[Specific_Process_Knowledge/Lithography/Baking#Fume_hood_hotplates|Fume hood hotplates]]
 ![[Specific_Process_Knowledge/Lithography/Baking#Oven 90C|Oven 90C]]
 ![[Specific_Process_Knowledge/Lithography/Baking#Oven: 110C - 250C|Oven: 110C - 250C]]
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 *Soft bake of SU-8
 *PEB of SU-8
-|
-Manual contact bake
-*Soft bake
 |
 Manual convection bake
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 |
 Maximum 110°C
-|
-Maximum 300°C
-Maximum temperature may be limited on the individual hotplate
 |
 Fixed at 90°C
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 * 150 mm wafer
 * 200 mm wafer
-|
-* pieces
-* 50 mm wafers
-* 100 mm wafers
-* 150 mm wafer
 |
 * 100 mm wafers
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 Film or pattern of all types except type IV
-|
-Respect the allowed materials on the associated spin coater
 |
 Silicon, glass, and polymer substrates
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 Pb, Te films
-|III-V substrates unless specifically stated
-Respect the restrictions on the associated spin coater
 |III-V, copper, steel substrates
 |III-V, low Tg polymer, copper, steel substrates