Specific Process Knowledge/Lithography/Baking: Difference between revisions
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![[Specific_Process_Knowledge/Lithography/Baking#Hotplate:_90-110C|Hotplate: 90-110C]] | ![[Specific_Process_Knowledge/Lithography/Baking#Hotplate:_90-110C|Hotplate: 90-110C]] | ||
![[Specific_Process_Knowledge/Lithography/Baking#Hotplate 1 (SU8) and Hotplate 2 (SU8)|Hotplate 1 (SU8) and 2]] | ![[Specific_Process_Knowledge/Lithography/Baking#Hotplate 1 (SU8) and Hotplate 2 (SU8)|Hotplate 1 (SU8) and 2]] | ||
![[Specific_Process_Knowledge/Lithography/Baking#Oven 90C|Oven 90C]] | ![[Specific_Process_Knowledge/Lithography/Baking#Oven 90C|Oven 90C]] | ||
![[Specific_Process_Knowledge/Lithography/Baking#Oven: 110C - 250C|Oven: 110C - 250C]] | ![[Specific_Process_Knowledge/Lithography/Baking#Oven: 110C - 250C|Oven: 110C - 250C]] | ||
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*Soft bake of SU-8 | *Soft bake of SU-8 | ||
*PEB of SU-8 | *PEB of SU-8 | ||
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Manual convection bake | Manual convection bake | ||
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Maximum 110°C | Maximum 110°C | ||
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Fixed at 90°C | Fixed at 90°C | ||
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* 150 mm wafer | * 150 mm wafer | ||
* 200 mm wafer | * 200 mm wafer | ||
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* 100 mm wafers | * 100 mm wafers | ||
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Film or pattern of all types except type IV | Film or pattern of all types except type IV | ||
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Silicon, glass, and polymer substrates | Silicon, glass, and polymer substrates | ||
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Pb, Te films | Pb, Te films | ||
|III-V, copper, steel substrates | |III-V, copper, steel substrates | ||
|III-V, low Tg polymer, copper, steel substrates | |III-V, low Tg polymer, copper, steel substrates |
Revision as of 13:51, 3 November 2015
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Comparing baking methods
Hotplate: 90-110C | Hotplate 1 (SU8) and 2 | Oven 90C | Oven: 110C - 250C | Oven 250C | |
---|---|---|---|---|---|
Purpose |
Programmable contact bake
|
Programmable, ramped contact bake
|
Manual convection bake
|
Manual convection bake
|
Manual convection bake
|
Temperature |
Maximum 120°C |
Maximum 110°C |
Fixed at 90°C |
110 - 250°C Return to 110°C after use |
Fixed at 250°C |
Substrate size |
|
|
|
|
|
Allowed materials |
All substrates Film or pattern of all types |
Silicon, glass, and polymer substrates Film or pattern of all types except type IV |
Silicon, glass, and polymer substrates Film or pattern of all types |
Silicon, glass, and high Tg polymer substrates Film or pattern of all types |
Silicon, glass, and high Tg polymer substrates Film or pattern of all types except resist |
Restrictions (Not allowed) |
III-V, copper, steel substrates
Pb, Te films |
III-V, copper, steel substrates | III-V, low Tg polymer, copper, steel substrates | III-V, low Tg polymer, copper, steel substrates
Resist is not allowed |
Hotplates
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Hotplate: 90-110C
Hotplate: 90-110C is used for baking of 2" - 6" wafers. Do not exceed 120°C.
The user manual, and contact information can be found in LabManager: Hotplate: 90-110C
Hotplate 1 (SU8) and Hotplate 2 (SU8)
We have two dedicated SU-8 hotplates in C-1.
Users can control the ramp-time, the baking temperature, and the baking time. In order to avoid thermal curing of SU-8 residues on the hotplates, they are temperature limited to 110°C.
The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)
Fume hood hotplates
This section is under construction
Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist on the associated spin coater.
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Fume hood hotplate for Manual Spinner (Polymers) located in the fume hood in C-1. Limited to 300°C.
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Fume hood hotplate for Manual Spinner 1 located in the fume hood in E-5. Limited to 210°C.
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Fume hood hotplate (Si) for Spin coater: Manual Labspin located in the fume hood in A-5. Limited to 220°C.
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Fume hood hotplate (III-V) for Spin coater: Manual Labspin located in the fume hood in A-5. Right: High temperature; limited to 280°C. Left: Low temperature; limited to 125°C.
Ovens
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Oven 90C
The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.
The user manual, and contact information can be found in LabManager: Oven 90C
Oven: 110C - 250C
Variable temperature convection oven mostly used for baking of wafers as a hard baking step after development of photoresist.
The set-point can be varied, but should always be returned to 110°C after use.
The user manual, and contact information can be found in LabManager: Oven: 110C - 250C
Oven 250C for pretreatment
See Oven 250C