Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions
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== Deposition of Aluminium Nitride == | == Deposition of Aluminium Nitride == | ||
AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen. AlN film can be deposited by using the [[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]] | AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen. AlN film can be deposited by using the [[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]] or the [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]]. | ||
*[[/AlN in PVD co-sputter|Al<sub>x</sub>N<sub>y</sub> in PVD co-sputter/evaporation]] <br/> | *[[/AlN in PVD co-sputter|Al<sub>x</sub>N<sub>y</sub> in PVD co-sputter/evaporation]] <br/> | ||
Revision as of 13:20, 2 November 2015
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Deposition of Aluminium Nitride
AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen. AlN film can be deposited by using the Cryofox PVD co-sputter/evaporation or the Lesker Sputter System.
Only one method at the moment
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