Jump to content

Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions

Tigre (talk | contribs)
Tigre (talk | contribs)
Line 338: Line 338:




== Field stitching ==
In this experiment, several writing fields (1 mm x 1 mm) were stitched together. Vernier scales on the edges of each writing field shows the field stitching bewteen fields.
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  style="width: 95%"
|-
|-
|-style="background:Black; color:White"
!colspan="6"|wafer 11.17 Stitching accuracy, Processed by TIGRE, April 2015
|-
|-
|-style="background:WhiteSmoke; color:black"
!Resist
!E-beam exposure
!Development
!Metallisation
!Lift-off
!Characterisation
|-
|-
|-style="background:WhiteSmoke; color:black"
|CSAR AR-P6200 AllResist, 4000 rpm, 60s, softbaked 60s @ 150degC
|JBX9500 E-2, 2nA aperture 5, dose 300 µC/cm2, L1: 1st set of Vernier scales on edges (North, Upper Right, East, Lower Right, South, Lower Left, West, Upper Left) of entire writi9ng field
|AR-600-546, 60 s
|5 nm Ti, 45 nm Au, Wordentec (D-2)
|AR-600-71, 5-10 min, 4s ultrasonic (D-3)
|Zeiss Supra 60VP, 10kV, Inlens detector
|-
|}
[[File:FieldToField.png|700px]]
<br> <br>


== Overlay accuracy (layer to layer stitching) ==
== Overlay accuracy (layer to layer stitching) ==