Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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At Danchip we have six furnaces for oxidation: A1,A3,C1,C2,C3 and D1. Oxidation can take place either by a dry process or a wet process. The film quality of dry oxide is better than for wet oxide with regards to density and dielectric constant. | At Danchip we have six furnaces for oxidation: A1,A3,C1,C2,C3 and D1. Oxidation can take place either by a dry process or a wet process. The film quality of dry oxide is better than for wet oxide with regards to density and dielectric constant. | ||
If the film quality for the wet oxide is acceptable then the thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is chosen. | If the film quality for the wet oxide is acceptable then the thickness and the time it takes to grow the oxide often decides if a dry or wet oxidation is chosen. | ||
*Dry oxide is used from 5nm - 200nm. Can be grown in furnaces:A1,A3,C1,C2,C3. | *Dry oxide is used from 5nm - 200nm. Can be grown in furnaces: A1,A3,C1,C2,C3. | ||
*Wet oxide with O<math>_2</math> and H<math>_2</math> can be grown in furnace:A1,A3. | *Wet oxide with O<math>_2</math> and H<math>_2</math> can be grown in furnace: A1,A3. | ||
*Wet oxide with H<math>_2</math>O in a bubbler can be grown in furnaces:C1,C2,C3. | *Wet oxide with H<math>_2</math>O in a bubbler can be grown in furnaces: C1,C2,C3,D1. | ||
==Comparing the six oxidation furnaces== | ==Comparing the six oxidation furnaces== | ||