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Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions

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|style="background:LightGrey; color:black"|Drive-in of phosphor, oxidation and annealing ||style="background:WhiteSmoke; color:black"|Oxidation:
|style="background:LightGrey; color:black"|Drive-in of phosphor, oxidation and annealing ||style="background:WhiteSmoke; color:black"|Oxidation:
*Dry
*Dry
*Wet: with torch (H2+O2)
*Wet: with torch (H<math>_2</math>+O<math>_2</math>)
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!style="background:silver; color:black" align="left"|Performance
!style="background:silver; color:black" align="left"|Performance
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
*Dry SiO<sub>2</sub>: 10Å to ~2000Å (takes too long to make it thicker)
*Dry SiO<sub>2</sub>: 50Å to ~2000Å (takes too long to make it thicker)
*Wet SiO<sub>2</sub>: 10Å to ~5µm ((takes too long to make it thicker)
*Wet SiO<sub>2</sub>: 50Å to ~5µm ((takes too long to make it thicker)
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!style="background:silver; color:black" align="left"|Process parameter range
!style="background:silver; color:black" align="left"|Process parameter range