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New page: ==C4 Furnace Aluminium Anneal== thumb|300x300px|C2 Furnace Anneal Oxide: positioned in cleanroom 2 C2 Furnace Anneal Oxide is a Tempress horizontal furnace for oxidati...
 
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==C4 Furnace Aluminium Anneal==
==C4 Furnace Aluminium Anneal==
[[Image:image.JPG|thumb|300x300px|C2 Furnace Anneal Oxide: positioned in cleanroom 2]]
[[Image:image.JPG|thumb|300x300px|C4 Furnace Aluminium Anneal: positioned in cleanroom 2]]


C2 Furnace Anneal Oxide is a Tempress horizontal furnace for oxidation and annealing of silicon wafers.
C4 Furnace Anneal Oxide is a Tempress horizontal furnace for annealing of silicon wafers.


This furnace is the second furnace tube in the furnace C-stack positioned in cleanroom 2. The furnaces are the cleanest process chambers in the cleanroom. In this furnace it is allowed to enter wafers that comes directly from PECVD1 (assuming they were very clean when entering PECVD1). Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.
This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom 2. The furnaces are the cleanest process chambers in the cleanroom. In this furnace it is allowed to enter wafers that contains aluminium. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.


==Process knowledge==
==Process knowledge==
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
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==A rough overview of the performance of Anneal Oxide furnace and some process related parameters==
==A rough overview of the performance of Aluminium Anneal furnace and some process related parameters==


{| border="2" cellspacing="0" cellpadding="10"  
{| border="2" cellspacing="0" cellpadding="10"  
|-
|-
!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="left"|Purpose  
|style="background:LightGrey; color:black"|Oxidation and annealing ||style="background:WhiteSmoke; color:black"|Oxidation:
|style="background:LightGrey; color:black"|Annealing ||style="background:WhiteSmoke; color:black"|.
*Dry
*Wet: with bubbler (water steam + N<math>_2</math>)
|-
|-
!style="background:silver; color:black" align="left"|Performance
!style="background:silver; color:black" align="left"|Performance
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|.
*Dry SiO<sub>2</sub>: 10Å  to ~2000Å (takes too long to make it thicker)
*Wet SiO<sub>2</sub>: 10Å to ~5µm ((takes too long to make it thicker)
|-
|-
!style="background:silver; color:black" align="left"|Process parameter range
!style="background:silver; color:black" align="left"|Process parameter range
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**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
*Quartz wafers (RCA cleaned)
*Quartz wafers (RCA cleaned)
*From PECVD1 directly (assuming they fulfilled the above before entering the PECVD1)
*Wafers with aluminium.
|-  
|-  
|}
|}
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