Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions

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[[Image:image.JPG|thumb|300x300px|A3 phosphorus drive-in furnace: positioned in cleanroom 2]]
[[Image:image.JPG|thumb|300x300px|A3 phosphorus drive-in furnace: positioned in cleanroom 2]]


A3 Furnace phosphorus drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing and for drive-in of phospher after a pre-deposition of phospher in the A4 Furnace phosporus pre-dep. It can also be used for drive in of phospher which has been ion implanted.
A3 Furnace phosphorus drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing and for drive-in of phosphor after a pre-deposition of phospher in the A4 Furnace phosphorus pre-dep. It can also be used for drive in of phosphor which has been ion implanted.


This furnace is the third furnace tube in the furnace A-stack positioned in cleanroom 2. The A-stack together with furnace C1 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.
This furnace is the third furnace tube in the furnace A-stack positioned in cleanroom 2. The A-stack together with furnace C1 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.
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!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="left"|Purpose  
|style="background:LightGrey; color:black"|Drive-in of phospher, oxidation and annealing ||style="background:WhiteSmoke; color:black"|Oxidation:
|style="background:LightGrey; color:black"|Drive-in of phosphor, oxidation and annealing ||style="background:WhiteSmoke; color:black"|Oxidation:
*Dry
*Dry
*Wet: with torch (H2+O2)
*Wet: with torch (H2+O2)

Revision as of 14:38, 26 February 2008

A3 Furnace Phosphorus drive-in

File:Image.JPG
A3 phosphorus drive-in furnace: positioned in cleanroom 2

A3 Furnace phosphorus drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing and for drive-in of phosphor after a pre-deposition of phospher in the A4 Furnace phosphorus pre-dep. It can also be used for drive in of phosphor which has been ion implanted.

This furnace is the third furnace tube in the furnace A-stack positioned in cleanroom 2. The A-stack together with furnace C1 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.

A rough overview of the performance of the phosphorus drive-in furnace and some process related parameters

Purpose Drive-in of phosphor, oxidation and annealing Oxidation:
  • Dry
  • Wet: with torch (H2+O2)
Performance Film thickness
  • Dry SiO2: 10Å to ~2000Å (takes too long to make it thicker)
  • Wet SiO2: 10Å to ~5µm ((takes too long to make it thicker)
Process parameter range Process Temperature
  • 800-1150 oC
. Process pressure
  • 1 atm
. Gas flows
  • H:? sccm
  • N:? sccm
Substrates Batch size
  • 1-30 4" wafer (or 2" wafers) per run
. Substrate material allowed
  • Silicon wafers (new from the box or RCA cleaned)
    • with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
  • Quartz wafers (RCA cleaned)
  • From A4 furnace directly (e.g. incl. Predep HF)
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