Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions

From LabAdviser
Paphol (talk | contribs)
No edit summary
Paphol (talk | contribs)
Line 27: Line 27:
!Generel description
!Generel description
|
|
*Reactive Sputtering (Al target)
*Reactive Sputtering (Al target) or AlN target sputtering
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"

Revision as of 12:10, 7 October 2015

Feedback to this page: click here


Deposition of Aluminium Nitride

Write a short description of the process and how to perform the process.



Only one method at the moment

Cryofox PVD co-sputter/evaporation
Generel description
  • Reactive Sputtering (Al target) or AlN target sputtering
Stoichiometry
  • Depend on the targets power
Film Thickness
  • 0nm - 200nm
Deposition rate
  • Not tested
Step coverage
  • Very good
Process Temperature
  • Up to 400oC
Substrate size
  • 100 mm wafers (Up to 12 wafers at a time)
  • 150 mm wafers (Up to 4 wafers at a time)
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Any metals