Specific Process Knowledge/Lithography/EBeamLithography/RaithElphyManual: Difference between revisions

From LabAdviser
Tigre (talk | contribs)
Created page with "'''Feedback to this page''': '''[mailto:e-beam@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/L..."
 
Tigre (talk | contribs)
Line 15: Line 15:


   
   
== Rough estimation of exposure time ==
{| cellpadding="2" style="border: 2px solid darkgray;"
! width="500" |
|- border="0"
|[[File:currentbeamsize.jpg|400px]]
|- align="center"
|Beam diameter versus Beam current: The machine have three operating objective apertures (no. 15 on above illustration of the column) in order to obtain different beam diameters in different current ranges. The available apertures are called 'aperture 5' (60 µm), 'aperture 6' (100 µm) and 'aperture 7' (200 µm).
|}
<br clear="all" />
= Mounting of chips or wafers into cassette =
= Mounting of chips or wafers into cassette =

Revision as of 12:04, 28 September 2015

Feedback to this page: click here

Purpose, location and technical specifications

Location

Techical Specification

The system can be characterized as follows:

  • The spot beam for electron beam writing is generated by a ZrO/W emitter and a four-stage electron beam focusing lens system, see illustration below.


Mounting of chips or wafers into cassette