Specific Process Knowledge/Thin film deposition/Deposition of Alumina: Difference between revisions

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+*Reactive Sputtering
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 *ALD (atomic layer deposition) of Al<sub>2</sub>O<sub>3</sub>
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+*Not tested
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 *Al<sub>2</sub>O<sub>3</sub>, very good
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+* 0nm - 200nm
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 * 0nm - 100nm
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+* Not tested
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 *0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, temperature dependent)
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+*Very good
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 *Very good. Covers sample everywhere (but long purge time needed for very high aspect ratio structures)
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+* Up to 400<sup>o</sup>C
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 *150<sup>o</sup>C - 350<sup>o</sup>C:
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+* -
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 *[[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]
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+* 100 mm wafers (Up to 12 wafers at a time)
+* 150 mm wafers (Up to 4 wafers at a time)
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 *1-5 100 mm wafers
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+*Silicon
+*Silicon oxide, silicon nitride
+*Quartz/fused silica
+*Photoresist
+*PMMA
+*Mylar
+*SU-8
+*Any metals
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 *Silicon