Specific Process Knowledge/Characterization/XPS/Processing/Basics/1intro: Difference between revisions
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* '''Which peaks to add''': The two spin-orbit doublets Si2p and Cu2p should be treated differently. The Si2p doublet peak is treated as one peak because of the small spin-orbit splitting (the splitting is 0.63 eV less than the 1 eV step size of the survey spectrum, see [[Specific Process Knowledge/Characterization/XPS/Processing/Basics/2highres#anchor_peaktable1|table in the next section]]). In contrast, the Cu2p doublet has some 20 eV's of spin-orbit splitting - as such the peaks may be fitted individually. The best way of fitting and quatinfying is to omit one of the peaks as is the case with the Zn2p doublet. This is easily done by removing the checkmark in the 'Q' column of one of the Cu2p peaks. | * '''Which peaks to add''': The two spin-orbit doublets Si2p and Cu2p should be treated differently. The Si2p doublet peak is treated as one peak because of the small spin-orbit splitting (the splitting is 0.63 eV less than the 1 eV step size of the survey spectrum, see [[Specific Process Knowledge/Characterization/XPS/Processing/Basics/2highres#anchor_peaktable1|table in the next section]]). In contrast, the Cu2p doublet has some 20 eV's of spin-orbit splitting - as such the peaks may be fitted individually. The best way of fitting and quatinfying is to omit one of the peaks as is the case with the Zn2p doublet. This is easily done by removing the checkmark in the 'Q' column of one of the Cu2p peaks. | ||
* '''Etching through thin layers: Probe depth and etch rates''': It looks as if the copper layer is contaminated with ZnO - at least the signals of Zn and O are not zero. There are several explanations for this: | * '''Etching through thin layers: Probe depth and etch rates''': It looks as if the copper layer is contaminated with ZnO - at least the signals of Zn and O are not zero. There are several explanations for this: | ||
** The etching is too aggressive so the Cu layer is removed within too few levels. Lower the parameters of the ion bombardment to have more points. | ** The etching is too aggressive so the Cu layer is removed within too few etch levels. Lower the parameters of the ion bombardment to have more points. | ||
** The etching is non-uniform across the area that is probed. | ** The etching is non-uniform across the area that is probed. | ||
** The probing depth is long compared to the thickness of Cu layer. | ** The probing depth is long compared to the thickness of Cu layer. | ||