Specific Process Knowledge/Characterization/XPS/XPS Depth profiling: Difference between revisions
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=Depth profiling= | |||
[[Image:Stochiometry 20110510.JPG|600x600px|left|thumb|The composition of a NiCr as a function of film depth (etch time). The relationship between Cr and Ni is quite constant through the 70nm thick film. Measurements done with XPS-ThermoScientific. ]] | |||
The analysis is made on a chosen spot on the sample surface (chosen with the system camera). The technique is, as written above, very surface sensitive and probes only the top nanometers of the sample. | |||
With the ion beam gun on the system an etch of the sample can be done. The system measures the desired spectrum, does an etch step and measures again. A series of etch cycles can be set up, measuring the composition of the sample at different depths (for example at different depth of a film). | |||
'''Example: NiCr film''' | |||
As an illustration, a figure to the left, shows an elemental analysis through a metallic film consisting of Ni and Cr. The metallic layer was about 70 nm thick, and the atomic percentage of Ni and Cr was measured through the layer. | |||
In the graph, you see the atomic % as a function of etch depth, and it is possible to detect that the relationship between Ni and Cr is fairly constant through the metallic film. | |||