Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions

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|-
|-
!22-7-2014
!2014-07-22
|1.573 (wafer center)
|157.3% (wafer center)
|
|
|
|
|-
|-
|-
|-
!B
!2015-09-08
|B1
|132 %
|B2
|B2
|B3
|B3

Revision as of 15:01, 8 September 2015

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How to calculate the tooling factor. Taken from the manufacture manual
Material parameters for using the crystal monitors
Material Density Z ratio
TiO2 4.260 0.400
SiO2 2.648 1.000
Si 2.320 0.712


Settings for Crystal thickness monitor 1
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
2014-07-22 157.3% (wafer center)
2015-09-08 132 % B2 B3
C C1 C2 C3
D D1 D2 D3


Settings for Crystal thickness monitor 2
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
A A1 A2 A3
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3
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