Specific Process Knowledge/Characterization/Element analysis: Difference between revisions
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* UHV vacuum compatible | * UHV vacuum compatible | ||
* The sample needs to be cut into small (app. 5*5 mm) pieces. | * The sample needs to be cut into small (app. 5*5 mm) pieces. | ||
| style="background:WhiteSmoke; color:black" | | | style="background:WhiteSmoke; color:black" align="left"| | ||
* UHV vacuum compatible | * UHV vacuum compatible | ||
* Sample size max 50x50 mm, thickness max 20 mm. | * Sample size max 50x50 mm, thickness max 20 mm. | ||
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! style="background:lightgrey; color:black" | Spatial resolution | ! style="background:lightgrey; color:black" | Spatial resolution | ||
|style="background:lightgrey; color:black"| Very precise point-like analysis is possible with SEM electron beam. | |style="background:lightgrey; color:black"| Very precise point-like analysis is possible with SEM electron beam. | ||
|style="background:lightgrey; color:black"| | |style="background:lightgrey; color:black"| A square with dimensions of a few hundred microns is selected for analyis with a camera | ||
|style="background:lightgrey; color:black"| | |style="background:lightgrey; color:black"| Using a magnified view from a camera, a point that covers an area down to an ellipse of 40 microns may be irradiated with photons (the default size is 400 microns) | ||
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! style="background:WhiteSmoke; color:black" | Depth resolution | ! style="background:WhiteSmoke; color:black" | Depth resolution | ||
| style="background:WhiteSmoke; color:black" | The size interaction volume depends on the | | style="background:WhiteSmoke; color:black" | The size of the interaction volume depends on the high voltage in the SEM and the sample density: The higher the SEM high voltage the bigger and deeper the interaction volume. The more dense the material is the smaller is the interaction volume. See section 'Spatial resolution using EDX' below. | ||
| style="background:WhiteSmoke; color:black" | The sputtering of the surface makes it possible to perform detailed depth profiling with extremely good sensitivity and depth resolution. | | style="background:WhiteSmoke; color:black" | The sputtering of the surface makes it possible to perform detailed depth profiling with extremely good sensitivity and depth resolution. | ||
| style="background:WhiteSmoke; color:black" | Very surface sensitive technique. | | style="background:WhiteSmoke; color:black" | Very surface sensitive technique. Only photoelectrons from the top layer (a few nanometers deep) escape unscattered. By using the ion beam etch, the composition of deeper lying layers can be probed. | ||
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! style="background:lightgrey; color:black" | Detection limit | ! style="background:lightgrey; color:black" | Detection limit | ||
|style="background:lightgrey; color:black"| Approximately 1 % atomic weight | |style="background:lightgrey; color:black"| Approximately 1 % atomic weight | ||
|style="background:lightgrey; color:black"| Down to 1 ppb for | |style="background:lightgrey; color:black"| Down to 1 ppb for certain elements | ||
|style="background:lightgrey; color:black"| Approximately 1 % atomic weight | |style="background:lightgrey; color:black"| Approximately 1 % atomic weight | ||
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