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Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,331 edits
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!
!
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace|Anneal Bond furnace (C3)]]
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace|Anneal Bond furnace (C3)]]
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_Al-Anneal|APOX furnace (C4)]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_APOX|APOX furnace (D1)]]
[[Specific_Process_Knowledge/Thermal_Process/Furnace_APOX|APOX furnace (D1)]]
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!Generel description
!Generel description
|Dry and wet oxidation. Boron pre-deposition and boron drive-in of boron are also done in the furnace.
|Dry and wet oxidation. Boron pre-deposition and boron drive-in of boron are also done in the furnace.
|Dry oxidation of gate-oxide and other very clean oxides.
|Dry oxidation of gate oxide and other very clean oxides.
|Dry and wet oxidation. Phosphorous drive-in is also done in the furnace.  
|Dry and wet oxidation. Phosphorous drive-in is also done in the furnace.  
|Dry and wet oxidation of 4" and 6" wafers. Oxidation of new wafers without RCA cleaning. Oxidation and annealing of wafers from the LPCVD furnaces and PECVD2.  
|Dry and wet oxidation of 100 mm and 150 mm wafers. Oxidation of new wafers without RCA cleaning. Oxidation and annealing of wafers from the LPCVD furnaces and PECVD2.  
|Dry and wet oxidation and annealing of wafers from EVG-NIL and PECVD3.
|Dry and wet oxidation and annealing of wafers from EVG-NIL and PECVD3.
|Dry oxidation of wafers with aliminium
|Wet oxidation of very thick oxides > 4 µm.
|Wet oxidation of very thick oxides, thickness higher than 4 µm.
|Dry oxidation and annealing of almost all materials.
|Dry oxidation and annealing of almost all materials on silicon wafers.
|-
|-


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*Dry: O<sub>2</sub>
*Dry: O<sub>2</sub>
*Wet: Bubbler  
*Wet: Bubbler  
|
*Dry: O<sub>2</sub>
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*Wet: Bubbler  
*Wet: Bubbler  
|
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*Dry: O<sub>2</sub>
*Dry: O<sub>2</sub>
*Wet: Bubbler
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Annealing gas
!Annealing gas
|
*N<sub>2</sub>
|
|
*N<sub>2</sub>
*N<sub>2</sub>
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|
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
|
*Up to 550 <sup>o</sup>C for aluminium
|
|
*1075 <sup>o</sup>C
*1075 <sup>o</sup>C
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|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Substrate and Batch size  
!Substrate and batch size  
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|
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
Including one test wafer
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|
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
Including one test wafer
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*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
Including one test wafer
|
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*Small samples on a carrier wafer, horizontal
*Small samples on a carrier wafer, horizontal
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*1-30 100 mm wafers
*1-30 100 mm wafers
*1-30 150 mm wafers
*1-30 150 mm wafers
Including one test wafer
|
|
*Small samples on a carrier wafer, horizontal
*Small samples on a carrier wafer, horizontal
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
Including one test wafer
|
|
*1-150 100 mm wafers
*1-150 100 mm wafers
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!'''Allowed materials'''
!'''Allowed materials'''
|
|
All wafers have to be RCA cleaned, except for boron pre-doped wafers from the same furnace.
*All wafers have to be RCA cleaned, except boron pre-doped wafers from the same furnace.
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All wafers have to be RCA cleaned.  
*All wafers have to be RCA cleaned.  
|
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All wafers have to be RCA cleaned, except for phosphorous pre-doped wafers from furnace A4.
*All wafers have to be RCA cleaned, except phosphorous pre-doped wafers from furnace A4.
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All processed wafers have to be RCA cleaned, except for wafers from LPCVD furnaces and PECVD2.  
*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD2.  
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All wafers have to be RCA cleaned, except for wafers from EVG-NIL, PECVD3 and wafers with aluminum.
*All processed wafers have to be RCA cleaned, except for wafers from EVG-NIL and PECVD3.
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Only new wafers
*Only new wafers
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Almost all materials, permission is needed
*Depends on the furnace quartz ware:
**Clean: Samples that have been RCA cleaned
**Metal: Almost all materials, permission is needed
**Resist pyrolysis
|-
|-
|}
|}
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