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Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,331 edits
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!
!
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace|Anneal Bond furnace (C3)]]
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace|Anneal Bond furnace (C3)]]
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_Al-Anneal|APOX furnace (C4)]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_APOX|APOX furnace (D1)]]
[[Specific_Process_Knowledge/Thermal_Process/Furnace_APOX|APOX furnace (D1)]]
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|Drive-in of boron deposited in the same furnace or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.
|Dry and wet oxidation. Boron pre-deposition and boron drive-in of boron are also done in the furnace.
|Oxidation of gate-oxide and other very clean oxides.
|Dry oxidation of gate-oxide and other very clean oxides.
|Drive-in of phosphorous deposited in the phosphorous pre-dep furnace (A4) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.
|Dry and wet oxidation. Phosphorous drive-in is also done in the furnace.  
|Oxidation of 4" and 6" wafers. Oxidation of new wafers without RCA cleaning. Oxidation of wafers from the LPCVD furnaces and PECVD2.  
|Dry and wet oxidation of 4" and 6" wafers. Oxidation of new wafers without RCA cleaning. Oxidation and annealing of wafers from the LPCVD furnaces and PECVD2.  
|Oxidation of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
|Dry and wet oxidation and annealing of wafers from EVG-NIL and PECVD3.
|Oxidation of very thick oxides, thickness higher than 4 µm.
|Dry oxidation of wafers with aliminium
|Oxidation of almost all materials on silicon wafers.
|Wet oxidation of very thick oxides, thickness higher than 4 µm.
|Dry oxidation and annealing of almost all materials on silicon wafers.
|-
|-


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*Dry: O<sub>2</sub>
*Dry: O<sub>2</sub>
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*Wet: Bubbler  
*Wet: Bubbler  
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*N<sub>2</sub>
*N<sub>2</sub>
*Ar
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*N<sub>2</sub>
*N<sub>2</sub>
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*N<sub>2</sub>
*N<sub>2</sub>
*Ar
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*N<sub>2</sub>
*N<sub>2</sub>
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*N<sub>2</sub>
*N<sub>2</sub>
*Ar
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*N<sub>2</sub>
*H<sub>2</sub>
|-
|-


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*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*550 <sup>o</sup>C for aluminium
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*Up to 550 <sup>o</sup>C for aluminium
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*1075 <sup>o</sup>C
*1075 <sup>o</sup>C
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*20 <sup>o</sup>C - 1000 <sup>o</sup>C
*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C
*No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C  
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*1-150 100 mm wafers
*1-150 100 mm wafers
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*Small samples on carrier wafer, horizontal
*1-30 50 mm, 100 mm or 150 mm wafers  
*1-25 50 mm wafers
*1-50 200 mm wafers
*1-25 100 mm wafers, vertical and horizontal
*Small samples on a carrier wafer, horizontal
|-
|-


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