Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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!
!
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace| C3: Anneal Bond]]
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace| C3: Anneal Bond]]
!
[[Specific_Process_Knowledge/Thermal_Process/C4_Al_Anneal_furnace| C4: Al Anneal Furnace]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]]
[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]]
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!General description
!General description
|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD2.  
|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD2.  
|Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
|Annealing of wafers from EVG-NIL and PECVD3.
|Annealing of wafers with Al.
|Annealing of almost all materials on silicon wafers.
|Annealing of almost all materials on silicon wafers.
|Rapid thermal annealing
|Rapid thermal annealing
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|
|
*N<sub>2</sub>
*N<sub>2</sub>
*Ar
*Wet annealing with bobbler (water steam + N<sub>2</sub>)
|
|
*N<sub>2</sub>
*N<sub>2</sub>
*Ar
|
*N<sub>2</sub>
|
|
*N<sub>2</sub>
*N<sub>2</sub>
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*N<sub>2</sub>
*N<sub>2</sub>
*H<sub>2</sub>
*H<sub>2</sub>
*H<sub>2</sub>-N<sub>2</sub> gas mixture
*Vacuum is possible  
*Vacuum is possible  
|-
|-
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|
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*700 <sup>o</sup>C - 1150 <sup>o</sup>C
*700 <sup>o</sup>C - 1150 <sup>o</sup>C
|
*Up to 500 <sup>o</sup>C
|
|
*20 <sup>o</sup>C - 1000 <sup>o</sup>C
*20 <sup>o</sup>C - 1000 <sup>o</sup>C
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*Ramp up to 300 C/min
*Ramp up to 300 C/min
|
|
*Vacuum: *20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
*No vacuum: *20 <sup>o</sup>C - 1100 <sup>o</sup>C
*No vacuum: 20 <sup>o</sup>C - 1100 <sup>o</sup>C
|-
|-


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*Small samples on a carrier wafer, horizontal
*Small samples on a carrier wafer, horizontal
*1-30 50 mm wafers
*1-30 100 mm wafers
|
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
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*One 100 mm wafers on a carrier wafer
*One 100 mm wafers on a carrier wafer
|
|
*1-30 50 mm, 100 mm or 150 mm wafers per run
*1-30 50 mm, 100 mm or 150 mm wafers  
*1-50 200 mm wafers per run
*1-50 200 mm wafers
*Smaller samples (placed in a Si carrier wafer)
*Small samples on a carrier wafer, horizontal
|-
|-


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!'''Allowed materials'''
!'''Allowed materials'''
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*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD1.  
*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD2.
|
*All processed wafers have to be RCA cleaned, except wafers from EVG-NIL and PECVD3.
|
|
*All processed wafers have to be RCA cleaned, except wafers from EVG-NIL, PECVD3 and wafers for annealing of aluminum.
*Wafers with Al
|
|
*Almost all materials, permission is needed.  
*Almost all materials, permission is needed.  

Revision as of 14:26, 5 August 2015

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Annealing

At Danchip we have four furnaces and an RTP (Rapid thermal annealing) that can be used annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Multipurpose Anneal furnace, Noble furnace and Jipelec RTP. Annealing normally takes place in an N2 atmosphere, or it can be done in H2 or a H2-N2 gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.

A 20 minutes N2 annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.

Comparison of the annealing furnaces

C1: Anneal Oxide

C3: Anneal Bond

C4: Al Anneal Furnace

Noble furnace

Jipelec RTP

Multipurpose Anneal Furnace

General description Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD2. Annealing of wafers from EVG-NIL and PECVD3. Annealing of wafers with Al. Annealing of almost all materials on silicon wafers. Rapid thermal annealing Annealing, oxidation and resist pyrolysis of different samples
Annealing gas
  • N2
  • N2
  • N2
  • N2
  • N2
  • Vacuum is possible
  • N2
  • H2
  • H2-N2 gas mixture
  • Vacuum is possible
Process temperature
  • 700 oC - 1100 oC
  • 700 oC - 1150 oC
  • Up to 500 oC
  • 20 oC - 1000 oC
  • 20 oC - 1000 oC
  • Ramp up to 300 C/min
  • Vacuum: 20 oC - 1050 oC¨
  • No vacuum: 20 oC - 1100 oC
Substrate and Batch size
  • Small samples on a carrier wafer, horizontal
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • 1-30 150 mm wafers
  • Small samples on a carrier wafer, horizontal
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • Small samples on a carrier wafer, horizontal
  • 1-25 50 mm wafers
  • 1-25 100 mm wafers, vertical and horizontal
  • Small samples on a carrier wafer, horizontal
  • One 100 mm wafers on a carrier wafer
  • 1-30 50 mm, 100 mm or 150 mm wafers
  • 1-50 200 mm wafers
  • Small samples on a carrier wafer, horizontal
Allowed materials
  • All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD2.
  • All processed wafers have to be RCA cleaned, except wafers from EVG-NIL and PECVD3.
  • Wafers with Al
  • Almost all materials, permission is needed.
  • III-V samples
  • Silicon wafers
  • Some metals
  • Depends on the furnace quartz ware:
    • Clean: Samples that have been RCA cleaned
    • Metal: Almost all materials, permission is needed
    • Resist Pyrolysis


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