Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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[[Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP| Jipelec RTP]]
[[Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP| Jipelec RTP]]
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[[Specific_Process_Knowledge/Thermal_Process/Furnace: Multipurpose Anneal| Multipurpose Anneal Furnace]]
[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing| Multipurpose Anneal Furnace]]
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*Some metals
*Some metals
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*Depends on the furnace quartz ware:
**Clean: Samples that have been RCA cleaned
**Metal: Almost all materials, permission is needed
**Resist Pyrolysis
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Revision as of 13:59, 5 August 2015

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Annealing

At Danchip we have three furnaces and an RTP (Rapid thermal annealing) that can be used annealing: C1, C3, Noble furnace and Jipelec RTP. Annealing normally takes place in an N2 atmosphere. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.

The recipes for oxidation are made so that a 20 minutes N2 annealing step is included after the oxiation step.

Comparison of the annealing furnaces

C1: Anneal Oxide

C3: Anneal Bond

Noble furnace

Jipelec RTP

Multipurpose Anneal Furnace

General description Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD2. Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. Annealing of almost all materials on silicon wafers. Rapid thermal annealing Annealing, oxidation and resist pyrolysis of different samples
Annealing gas
  • N2
  • N2
  • Ar
  • Wet annealing with bobbler (water steam + N2)
  • N2
  • Ar
  • N2
  • Vacuum is possible
  • N2
  • H2
  • Vacuum is possible
Process temperature
  • 700 oC - 1100 oC
  • 700 oC - 1150 oC
  • 20 oC - 1000 oC
  • 20 oC - 1000 oC
  • Ramp up to 300 C/min
  • Vacuum: *20 oC - 1050 o
  • No vacuum: *20 oC - 1100 oC
Substrate and Batch size
  • Small samples on a carrier wafer, horizontal
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • 1-30 150 mm wafers
  • Small samples on a carrier wafer, horizontal
  • 1-30 50 mm wafers
  • 1-30 100 mm wafers
  • Small samples on a carrier wafer, horizontal
  • 1-25 50 mm wafers
  • 1-25 100 mm wafers, vertical and horizontal
  • Small samples on a carrier wafer, horizontal
  • One 100 mm wafers on a carrier wafer
  • 1-30 50 mm, 100 mm or 150 mm wafers per run
  • 1-50 200 mm wafers per run
  • Smaller samples (placed in a Si carrier wafer)
Allowed materials
  • All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD1.
  • All processed wafers have to be RCA cleaned, except wafers from EVG-NIL, PECVD3 and wafers for annealing of aluminum.
  • Almost all materials, permission is needed.
  • III-V samples
  • Silicon wafers
  • Some metals
  • Depends on the furnace quartz ware:
    • Clean: Samples that have been RCA cleaned
    • Metal: Almost all materials, permission is needed
    • Resist Pyrolysis