Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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[[Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP| Jipelec RTP]] | [[Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP| Jipelec RTP]] | ||
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[[ | [[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing| Multipurpose Anneal Furnace]] | ||
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*Some metals | *Some metals | ||
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*Depends on the furnace quartz ware: | |||
**Clean: Samples that have been RCA cleaned | |||
**Metal: Almost all materials, permission is needed | |||
**Resist Pyrolysis | |||
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Revision as of 13:59, 5 August 2015
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Annealing
At Danchip we have three furnaces and an RTP (Rapid thermal annealing) that can be used annealing: C1, C3, Noble furnace and Jipelec RTP. Annealing normally takes place in an N2 atmosphere. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.
The recipes for oxidation are made so that a 20 minutes N2 annealing step is included after the oxiation step.
Comparison of the annealing furnaces
General description | Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD2. | Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum. | Annealing of almost all materials on silicon wafers. | Rapid thermal annealing | Annealing, oxidation and resist pyrolysis of different samples |
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Annealing gas |
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Process temperature |
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Substrate and Batch size |
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Allowed materials |
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