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| image:ALD_TiO2_grow_rate_350C.jpg| Temperature 350 <sup>o</sup>C. | | image:ALD_TiO2_grow_rate_350C.jpg| Temperature 350 <sup>o</sup>C. |
| </gallery> | | </gallery> |
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| | Evgeniy Shkondin, DTU Danchip, April-May 2014. |
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| ====TiO<sub>2</sub> results==== | | ====TiO<sub>2</sub> results==== |
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| <br clear="all" /> | | <br clear="all" /> |
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| ====TiO<sub>2</sub> deposition on trenches====
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| For TiO<sub>2</sub> deposition on trenches more information can be found here:
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| *[[Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD/TiO2 deposition on trenches using ALD|TiO<sub>2</sub> deposition on trenches using ALD]]
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| Below some SEM images of amorphous TiO<sub>2</sub> deposited at 120 <sup>o</sup>C on Si trenches are shown. The width of the trenches is 200 nm, and the depth is 4 µm, i.e. the aspect ratio is 1:20. The number of cycles is 500, and this results in a TiO<sub>2</sub> layer of about 25 nm. From the SEM images it is seen that the TiO<sub>2</sub> layer covers the trenches very well.
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| <gallery caption="Amorphous titanium dioxide deposited on Si trenches" widths="250px" heights="180px" perrow="3">
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| image:SEM-TiO2-120C-1.jpg|
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| image:SEM-TiO2-120C-2.jpg|
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| image:SEM-TiO2-120C-3.jpg|
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| </gallery>
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| Below some SEM images of anatase TiO<sub>2</sub> deposited at 300 <sup>o</sup>C on Si trenches are shown. The width of the trenches is 200 nm, and the depth is 4 µm, i.e. the aspect ratio is 1:20. The number of cycles is 500, and this results in a TiO<sub>2</sub> layer of about 26 nm. From the SEM images it is seen that the TiO<sub>2</sub> layer covers the trenches very well.
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| <gallery caption="Anastase titanium dioxide deposited on Si trenches" widths="250px" heights="180px" perrow="3">
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| image:TiO2 trenches-300C-1.jpg|
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| image:TiO2 trenches-300C-2.jpg|
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| image:TiO2 trenches-300C-3.jpg|
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| </gallery>
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| Evgeniy Shkondin, DTU Danchip, 2014. | | Evgeniy Shkondin, DTU Danchip, 2014. |
