Specific Process Knowledge/Thin film deposition/Deposition of TiW: Difference between revisions

Revision as of 09:44, 4 August 2015

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Deposition of TiW alloy can be done in the Wordentec.

Sputtering of TiW

Sputtering of TiW in Wordentec

	Sputter deposition (Wordentec)
General description	Sputter deposition of TiW
Pre-clean	RF Ar clean
Layer thickness	.
Deposition rate	Depending on process parameters, see here.
Batch size	24x2" wafers or 6x4" wafers or 6x6" wafers
Allowed substrates	Silicon wafers Quartz wafers Pyrex wafers
Allowed materials	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals
Comments	TiW alloy: 10%/90% by weight

Deposited rates

This is done by a sputtering process. Process parameters (argon pressure and effect) can be varied, the surface roughness and the deposition rate (see here) and may change with these settings.

Deposited film characteristics

AFM pictures show how the surface roughness is dependent of the process parameters, this can be seen here.

Revision as of 13:18, 10 April 2014 view source Knil (talk \| contribs) DCH-Employees-701 420 edits No edit summary ← Older edit		Revision as of 09:44, 4 August 2015 view source Mdyma (talk \| contribs) danchip 584 edits No edit summary Newer edit →
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	Deposition of TiW alloy can be done in the Wordentec.		Deposition of TiW alloy can be done in the Wordentec.


	~~'''Observe:''' ''right now we don´t have a TiW target for Wordentec, please contact thinfilm@danchip.dtu.dk if you are interested in depositing TiW.''~~