Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD: Difference between revisions
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image:TiO2 350C 1250 cycles Si_HF_treated.jpg| Temperature 350 <sup>o</sup>C, 1250 cycles, HF treated. | image:TiO2 350C 1250 cycles Si_HF_treated.jpg| Temperature 350 <sup>o</sup>C, 1250 cycles, HF treated. | ||
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XPS measurements of TiO<sub>2</sub> deposited at 120 <sup>o</sup>C and 300 <sup>o</sup>C are shown below. From the XPS measurements it can be calculated that at temperatures below 120 <sup>o</sup>C the TiO<sub>2</sub> layer will be contaminated with about 1-3 % chlorine molecules from the TiCl<sub>4</sub> precursor. This can be also seen as small white dots in the SEM image of the amorphous TiO<sub>2</sub> layers above. | |||
[[image:XPS_TiO2.jpg|320x320px|left|thumb|XPS measurements of titanium dioxide.]] | |||
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*[[Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD/TiO2 deposition on trenches using ALD|TiO<sub>2</sub> deposition on trenches using ALD]] | |||
Below some SEM images of amorphous TiO<sub>2</sub> deposited at 120 <sup>o</sup>C on Si trenches are shown. The width of the trenches is 200 nm, and the depth is 4 µm, i.e. the aspect ratio is 1:20. The number of cycles is 500, and this results in a TiO<sub>2</sub> layer of about 25 nm. From the SEM images it is seen that the TiO<sub>2</sub> layer covers the trenches very well. | Below some SEM images of amorphous TiO<sub>2</sub> deposited at 120 <sup>o</sup>C on Si trenches are shown. The width of the trenches is 200 nm, and the depth is 4 µm, i.e. the aspect ratio is 1:20. The number of cycles is 500, and this results in a TiO<sub>2</sub> layer of about 25 nm. From the SEM images it is seen that the TiO<sub>2</sub> layer covers the trenches very well. | ||
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image:TiO2 trenches-300C-3.jpg| | image:TiO2 trenches-300C-3.jpg| | ||
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