Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE process trends: Difference between revisions
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*Beam voltage – depends on application, 200-800eV. | *Beam voltage – depends on application, 200-800eV. | ||
*Always have neutraliser current 20% extra of the beam current value. | *Always have neutraliser current 20% extra of the beam current value. | ||
*Accelerator voltage between 100V –500V, adjust to get Ia < 10% Ib ('''it helps protect electronics and power supplies'''). | *Accelerator voltage between 100V –500V, adjust to get Ia (beam accelerator current) < 10% Ib (bean current) ('''it helps protect electronics and power supplies'''). | ||
*The real beam current is effectively the beam current minus accelerator current. | *The real beam current is effectively the beam current minus accelerator current. | ||
*Varying Ar flow for source gas as well as beam current will have an effect on the accelerator current. | *Varying Ar flow for source gas as well as beam current will have an effect on the accelerator current. | ||