Specific Process Knowledge/Lithography/UVLithography: Difference between revisions
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** For lift-off processes, we recommend resist thicknnesses ~5 times larger than the thickness of the metal to be lifted. | ** For lift-off processes, we recommend resist thicknnesses ~5 times larger than the thickness of the metal to be lifted. | ||
** For dry or wet etch processes, investiagte the etch rates in resist as this might limit the minimum thickness of your resist. | ** For dry or wet etch processes, investiagte the etch rates in resist as this might limit the minimum thickness of your resist. | ||
* '''Mask''': Design and order a photomask for your UV process. A detailed instruction on how to design and order a photomask can be found here. | * '''Mask''': Design and order a photomask for your UV process. A detailed instruction on how to design and order a photomask can be found [[Specific_Process_Knowledge/Lithography/Pattern_Design_and_Mask_Fabrication#Mask_Fabrication|here]]. | ||
* '''Substrate pretreatment''': In many processes it is recommended to pretreat your wafer before spin-coating. In some spin-coaters, these pretreatment processes are included in the spin coating of resist. If you use either the '''RCD8, SSE or a manual spin coater''', you should book equipment for pretreatment prior to spin coating. | * '''Substrate pretreatment''': In many processes it is recommended to pretreat your wafer before spin-coating. In some spin-coaters, these pretreatment processes are included in the spin coating of resist. If you use either the '''RCD8, SSE or a manual spin coater''', you should book equipment for pretreatment prior to spin coating. | ||