Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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|style="background:LightGrey; color:black"|Resolution | |style="background:LightGrey; color:black"|Resolution | ||
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* ~5 nm beam diameter, ~10 nm lines obtained in 50 nm resist | * ~5 nm beam diameter, ~10 nm lines obtained in 50 nm thick resist (CSAR) | ||
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