Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual: Difference between revisions
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''' Mask writing mode (first print) ''' | ''' Mask writing mode (first print) '''<br> | ||
With the path DRF5M, which is recommended for first print exposures (mask writing mode), HEIMAP is executed right before the machine starts the exposure and the machine will use the HEIMAP settings saved at this point. | With the path DRF5M, which is recommended for first print exposures (mask writing mode), HEIMAP is executed right before the machine starts the exposure and the machine will use the HEIMAP settings saved at this point. | ||
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''' Direct writing mode (with alignment) ''' | ''' Direct writing mode (with alignment) '''<br> | ||
When the exposure is performed in direct writing mode, i.e. the pattern is aligned to P and Q marks on the wafer and/or virtual chip mark detection is obtained, the result of HEIMAP is '''discarded''' and can be omitted in initial calibration. In this case, HEIMAP can be executed to check the substrate has been mounted correctly in the cassette. | When the exposure is performed in direct writing mode, i.e. the pattern is aligned to P and Q marks on the wafer and/or virtual chip mark detection is obtained, the result of HEIMAP is '''discarded''' and can be omitted in initial calibration. In this case, HEIMAP can be executed to check the substrate has been mounted correctly in the cassette. | ||
It is important to measure height at substrate positions where the beam is | It is important to measure height over an area that cover the entire pattern to be exposed. Also, make sure not measure height too close to the rim of the cassette (0.5-1 cm depending on cassette) or at substrate positions where the laser beam is deflected from holes or mesas. | ||
If the HEIMAP subprogram finishes successfully but one or more measurement points turns out with 'Error', the system will focus the beam | |||
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|Results of HEIMAP can be found in the Map Analysis program ( | |Results of HEIMAP can be found in the Map Analysis program (EBXMENU/Analysis/Map). In mask writing mode (i.e. without alignment), the system focusses the beam to the average height of all successfully measured points performed in HEIMAP. || HEIMAP measures the height of the substrate with two laser beams forming a x-shaped spot on the substrate. The spot size on the substrate has a width of 0.94 mm in X-direction. The laser beams have an incident angle of 17 degrees. | ||
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= Exposure of mgn-files = | = Exposure of mgn-files = | ||