Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual: Difference between revisions

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-#Click 'HEIMAP/Edit Parameters...'. Enter
+{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
+! width="200" |
+! width="200" |
+! width="200" |
+|- border="0"
+|[[File:DRIFT.png|400px]]
+|[[File:drift.png|500px]]
+|[[file:DRIFT mark.png|450px]]
+|- align="center"
+|In the DRIFT subprogram window, you can either use the <br> '''1''' BE mark: click 'acquisition of Bottom BE mark' or <br> '''2''' use your own global mark: tick 'rough scan not available' and enter the stage position of your global mark || DRIFT measurements (by PATH DRF5M) during a 7 hour long exposure. The machine will positionally correct for the displacement it observes during exposure, i.e. the maximum pattern displacement is the drift between every measurement point (5 min).  || According to this table (provided by JEOL) a global mark (P) can be used as a DRIFT mark in automatic or semi-automatic alignment mode if CHIPAL 0, V1, V4 or S is used. A chip mark can be used as a DRIFT mark in any case where CHIPAL is defined to CHIPAL 1 or CHIPAL 4.
+|}
-*Material type: Wafer (unless you expose a mask)
-*Material size: The size of loaded wafer in units of inches, i.e. 2, 4 or 6. If you use the chip cassette or the 65mm stamp cassette, choose 3".
-*Multi-piece window: the location of the wafer/chip. You should perform HEIMAP on all loaded wafers/chips.
-*Zigzag: use X->Y
-*Number of height measurement points X, Y: standard is 5 in both X- and Y-direction.
-*Height data measurement pitch: define the pitch of the measurements points to fit the size of the exposed pattern.
-*Insert an offset to the measurements if your pattern is located away from (0,0).
-*DO NOT change any other parameters in HEIMAP