Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual: Difference between revisions

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 === SUBDEFBE ===
-== DRIFT ==
+=== DRIFT ===
-*Edit and execute ‘DRIFT’: click ‘DRIFT/Edit Parameter...'. Select ‘Acquisition of bottom BE mark’, and click ‘Save’ and ‘Execute’. Exit the window by clicking ‘Cancel’. If you are calibrating the high current of a double-current exposure you should increase the scan width to 40 microns and note the position of the drift mark. When calibrating the low current of a double-current exposure, make sure DRIFT scans the same drift mark as the high-current condition file.
+[[File:drift.png|400px|right]]
+'''In mask writing mode''', i.e. where the pattern is exposed on a blank wafer, it is recommended to use a BE mark as a drift mark.
+<br "clar all">
 == HEIMAP ==