Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual: Difference between revisions
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!style="background:# | !style="background:#ADD8E6; color:Black"|CURRNT | ||
|The stage moves the Faraday's cup to the beam and the machine reads the value of the cup. The machine measures the beam current 5 times and calculate the average of the beam current based on these 5 measurements. | |The stage moves the Faraday's cup to the beam and the machine reads the value of the cup. The machine measures the beam current 5 times and calculate the average of the beam current based on these 5 measurements. | ||
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!style="background:# | !style="background:#ADD8E6; color:Black"|INITAE | ||
|The AE marks (Absorbed Electrons) is a mark type that is connected to a pn-junction, i.e. the current abosrbed in the mark is measured. The AE mark is a knife-edge mark, i.e. is has (originally) very sharp edges. When the beam (with a well-known frequency) scans over this type of mark and absorbed current simultanously is measured, an estimate of the beam diameter can be found. '''INITAE''' is a subprogram that finds the AE mark and scans it for testing that the machine can find the mark. | |The AE marks (Absorbed Electrons) is a mark type that is connected to a pn-junction, i.e. the current abosrbed in the mark is measured. The AE mark is a knife-edge mark, i.e. is has (originally) very sharp edges. When the beam (with a well-known frequency) scans over this type of mark and absorbed current simultanously is measured, an estimate of the beam diameter can be found. '''INITAE''' is a subprogram that finds the AE mark and scans it for testing that the machine can find the mark. | ||
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!style="background:# | !style="background:#ADD8E6; color:Black"|INITBE | ||
|The BE mark (Backscattered Electrons) is a mark type that consists of a suspended grid of metal. The openings in the grid is 500 microns in both X and Y. When the beam scans over this type of mark, backscattered electrons are detected with the BE detector inside the chamber. This type of mark is used to correlate stage position and beam position during calibration. '''INITBE''' is a subprogram that find the BE mark and scans it for testing that the machine can find the mark. | |The BE mark (Backscattered Electrons) is a mark type that consists of a suspended grid of metal. The openings in the grid is 500 microns in both X and Y. When the beam scans over this type of mark, backscattered electrons are detected with the BE detector inside the chamber. This type of mark is used to correlate stage position and beam position during calibration. '''INITBE''' is a subprogram that find the BE mark and scans it for testing that the machine can find the mark. | ||
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!style="background:# | !style="background:#ADD8E6; color:Black"|SFOCUS | ||
|This subprogram finds the minimum beam diameter by scanning an AE mark while changing the focus of the objective lens. The objective lens is defined to be in focus where the machine finds the minimum beam diameter. This program can also be used to obsrve the depth of focus of a certain condition file. | |This subprogram finds the minimum beam diameter by scanning an AE mark while changing the focus of the objective lens. The objective lens is defined to be in focus where the machine finds the minimum beam diameter. This program can also be used to obsrve the depth of focus of a certain condition file. | ||
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!style="background:# | !style="background:#ADD8E6; color:Black"|PDEFBE | ||
|Using a BE mark, this subprogram corrects deflection gain and rotation of the main deflector | |Using a BE mark, this subprogram corrects deflection gain and rotation of the main deflector | ||
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!style="background:# | !style="background:#ADD8E6; color:Black"|DISTMEM | ||
| | |This subprogram measures the distortion of the beam deflection within the field, writes to the deflection distortion correction memory, and create a deflection distortion correction file. The program sets the distortion directly below the beam (center of the field) to zero. | ||
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!style="background:# | !style="background:#ADD8E6; color:Black"|DISTBE | ||
|This subprogram measures and corrects the deflection distortion of the beam in the entire writing field (using both deflectors to deflect the beam). The most important input parameter of this subprogram is the ''''allowable convergence value''' which ideally is set to a few nanometers above the convergence value output of PDEFBE. For 0.2 nA, a reasonable convergence value is e.g. 8 nm. | |This subprogram measures and corrects the deflection distortion of the beam in the entire writing field (using both deflectors to deflect the beam). The most important input parameter of this subprogram is the ''''allowable convergence value''' which ideally is set to a few nanometers above the convergence value output of PDEFBE. For 0.2 nA, a reasonable convergence value is e.g. 8 nm. | ||
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!style="background:# | !style="background:#ADD8E6; color:Black"|SUBDEFBE | ||
|Using a BE mark, this subprogram corrects deflection gain and rotation of the secondary (sub) deflector | |Using a BE mark, this subprogram corrects deflection gain and rotation of the secondary (sub) deflector | ||
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