Specific Process Knowledge/Lithography/EBeamLithographyManual: Difference between revisions
| Line 242: | Line 242: | ||
== HEIMAP == | == HEIMAP == | ||
''' Mask writing mode (first print) ''' | |||
With the path DRF5M, which is recommended for first print exposures (mask writing mode), HEIMAP is executed right before the machine starts the exposure and the machine will use the HEIMAP settings saved at this point. | |||
The e-beam software can only save and use one pitch-setting, even if you expose two wafers/chips. Therefore, perform and save HEIMAP with the settings you wish to perform right before exposure. | |||
When the exposure is performed in direct writing mode, i.e. the pattern is aligned to P and Q marks on the wafer or virtual chip mark detection is obtained, the result of HEIMAP is discarded and can be omitted in initial calibration. In this case, HEIMAP can be executed to check the substrate has been mounted correctly in the cassette. | |||
''' Direct writing mode (with alignment) ''' | |||
When the exposure is performed in direct writing mode, i.e. the pattern is aligned to P and Q marks on the wafer and/or virtual chip mark detection is obtained, the result of HEIMAP is discarded and can be omitted in initial calibration. In this case, HEIMAP can be executed to check the substrate has been mounted correctly in the cassette. | |||
| Line 270: | Line 273: | ||
# (Execute SETWFR and CHIPAL - If you are aligning in semi-automatical mode, see section 7) | # (Execute SETWFR and CHIPAL - If you are aligning in semi-automatical mode, see section 7) | ||